据TheElec，三星电子最早将在今年3月停止在华城园区12号生产线制造2D NAND闪存，该企业的2D NAND闪存时代也将随之正式结束。三星电子早在2013年就实现了3D NAND (V-NAND) 的量产，不过三星还是保留了小规模的2D NAND产能以应对特殊利基市场的需求。华城12号生产线未来将服务于1c nm DRAM内存制造，负责后端的金属布线和表面处理工艺。（财联社）
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CNN has requested comment on the report from the Chinese Embassy in Washington, DC.